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BRF1010 GA15N120 TDA726 C35005 TEA2031A DTA144EE 4LVC4245 20121
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  Datasheet File OCR Text:
 SMD Type
SURFACE MOUNT LOW LEAKAGE DIODE BAV170T; BAV199T
Diodes
SOT-523
+0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05
Unit: mm
+0.01 0.1-0.01
2
1
+0.15 1.6-0.15
Very Low Leakage Current
+0.25 0.3-0.05
0.5
+0.1 -0.1
0.35
3
1. Base
+0.05 0.75-0.05 +0.1 0.8-0.1
2. Emitter 3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Repetitive Peak Forward Current Symbol VRRM VRWM VR VR(RMS) IFM IFRM @ t = 1.0 Non-Repetitive Peak Forward Surge Current IFSM s Single Diode Double Diode Conditions Value 85 85 85 60 215 125 500 4 1 0.5 150 833 -65 to + 150 mW /W A mA Unit V V V V mA
@ t = 1.0 ms @ t = 1.0 s
Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Note
PD ReJA Tj , TSTG
1.Device mounted on FR-4 PC board with recommended pad layout
+0.05 0.8-0.05
Ultra-Small Surface Mount Package
0.55
Features
www.kexin.com.cn
1
SMD Type
BAV170T; BAV199T
Electrical Characteristics Ta = 25
Parameter Reverse Breakdown Voltage (Note 2) Symbol V(BR)R Conditions IR = 100 A Min 85 Typ
Diodes
Max
Unit V
IF = 1.0 mA Forward Voltage (Note 2) VF IF = 10 mA IF = 50 mA IF = 150 mA Leakage Current (Note 2) Total Capacitance Reverse Recovery Time Note 2.Short duration test pulse used to minimize self-heating effect. IR CT trr VR = 75 V VR = 75 V; Tj = 150 f = 1 MHz; VR = 0 V IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 2
0.90 1.0 1.1 1.25 5.0 80 pF 3.0 is nA V
Marking
Type Marking BAV170T 51 BAV199T 52
2
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